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Metal organic vapor phase epitaxy (MOVPE) CCS is low pressure system dedicated for III-V material synthesis (mainly arsenides and phosphides)

Close coupled showerhead reactor design equipped with a deposition quartz shield
Inert atmospheric processes (N₂ or H₂)
Maximum reactor temperature up to 1000° (susceptor surface temperature)
adjustable gap between suszeptor and quartz deposition shield
ARGUS in-situ surface temperature monitoring
Low pressure MOVPE (commonly between 50 and 800 mbar)
Metal organic source materials: TMGa, TEGa, TMIn, TMAl, TTBAl, TMSb, TESb, TMBi, DEZn, TESn, DTBSe
In-situ HCl etching capability
Available susceptor sizes: 1x 3”, 1x4”, 3x2”
N₂ inert gas atmosphere glove box attached
EPSION concentration control of all metal organic sources
LayTec system for in-situ reflectometry available
Main application: Synthesis of III-V-based one-dimensional nanostructures as e.g. InP. GaAs, InAs, (Al,Ga)As

Responsible: Sebastian Lehmann & Johan Stjernholm

Location: Room Q252, Level 2

License and Booking Required: Yes