Responsible: Amirreza Ghassami 

Location: Room Q258, Nano-epitaxy (Cleanroom Level 2)

License and Booking Required: Yes

Main application: Resist stripping, isotropic etching Si, SiO2 & SiNx.

• Plasma Enhanced CVD system (PECVD)
• Deposition of SiO₂, Si₃N₄ and a-Si
• HF (13.56 MHz) power: 0-1600 W
• LF power (kHz): 0- W
• Temperatures: 100 to 300°C
• Gases available: H₂, SiH₄, NH₃, N₂, O₂, C₄F₈, N₂O
• Maximum wafer size: 8"

Documents for the tool

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