Technical information
- Parallel plate RF processing.
- Plasma excitation: RF (13.56 MHz), Max power: 600W
- Min Pressure: 10mTorr
- Process gases: CF4, CHF3, SF6, O2 and Ar.
- 8" max wafer diameter.
- Equipped with Intellevation LEP400 laser interferometric etch depth monitor and end point detector.
Main Application: Etching Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry.
Tool Overview
Reactive Ion Etching (RIE) system Sirus T2 Plus from Trion Technology
Responsible: Dmitry Suyatin
Location: Room Q158, EVA-Lab (Cleanroom Level 1)
License and Booking Required: Yes
Documentation
Other Links
Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).
No wafer clamping.
Room temperature processing only.