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titleTechnical information
  • Inductively coupled plasma reactive ion etching (ICP-RIE).
  • Plasma excitation: ICP (2MHz, 1kW) and RF (13.56MHz, 300W).

  • Process gases: SF6, CHF3, CF4, C4F8, Ar, O2, H2, N2.

  • Process pressure: 3 - 100 mTorr. 
  • 8" max wafer diameter. Standard configuration for 4" wafer clamping.
  • Temperature control of substrate: -30°C to 150°C.
  • He back side cooling.

  • Optical emission spectroscopy (OES) endpoint detection system.

  • Main application: Controlled nanoscale etching of Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry.


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titleTool Overview

Responsible: user-44815 Luke Hankin 

Location: Room Q156, EBL-Lab (Cleanroom Level 1)

License and Booking Required: Yes

Supplier: Plasma-Therm / Advanced Vacuum Systems AB

   


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titleDocumentation

User Manuals

Process

Staff Documents



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titleOther Links

Safety Information 

View on LIMS

FAQ

User Discussion Forum




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