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titleTechnical information
  • Main application: Resist stripping, isotropic etching Si, SiO2 & SiNx.
  • Plasma excitation: MW (2.45 GHz, up to 1000W).
  • Process gases: O2, Ar and CF4.
  • Isotropic etching with minimum ion damage to samples.
  • Water cooled plate.
  • 6" max wafer diameter.


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titleTool Overview

Responsible: Sarah McKibbin and Alex den Ouden

Location: Room Q156, EBL-Lab (Cleanroom Level 1)

License and Booking Required: Yes


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titleDocumentation

User Manuals

Process

Staff Documents



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titleOther Links

Safety Information 

View on LIMS

FAQs

User Discussion Forum