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Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e

.

g. silicones).
  • No wafer clamping.
    • Room temperature processing

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    titleTechnical information
    • Parallel plate RF processingreactive ion etching system. 
    • Plasma excitation: RF (13.56 MHz), Max power: 600WMin Pressure: 10mTorr
    • Process gases: CF4, CHF3, SF6, O2 and Ar. 
    • Min Pressure: 10mTorr.
    • 8" max wafer diameter.
    • Equipped with Intellevation LEP400 laser interferometric etch depth monitor and end point detector.

    • Main Application: Etching Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry.

    Info


    Reactive Ion Etching (RIE) system Sirus T2 Plus from Trion Technology
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    titleTool Overview

    Responsible: Dmitry Suyatin user-44815

    Location: Room Q158, EVA-Lab (Cleanroom Level 1)

    License and Booking Required: Yes

    Model:  Sirus T2 Table-top RIE

    Supplier: Trion Technology.


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    titleDocumentation

    User Manuals

    Process

    Staff Documents



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    Safety Information 

    View on LIMS

    FAQ

    User Discussion Forum



    Info

    Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).

    No wafer clamping.

    Room temperature processing only.