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• Inductively coupled plasma reactive ion etching (ICP-RIE).
• Plasma excitation: ICP (2 MHz2MHz, 1 kW1kW) and RF (13.56 MHz56MHz, 300 W300W).

• Process gases: Cl₂, BCl₃, CH₄, Ar, O₂ and H₂.

• Process pressure: 3 - 100 mTorr. 
• 8" max wafer diameter. Standard config. for 2" wafer clamping.
• Substrate Temperature control: -40°C to 170°C..

• He back side cooling.

• Equipped with an optical Optical emission spectroscopy (OES) endpoint detection system.

• Main application: Controlled nanoscale etching  and atomic layer etching (ALE) of III-V semiconductors, Si, metals and polymers with chlorine-based chemistry.

Responsible: Dmitry Suyatin Luke Hankin 

Location: Room Q258, Cluster Tool room (Level 2)

License and Booking Required: Yes

Supplier: Plasma-Therm LLC

Model: APEX SLR

User Manuals

Process

Staff Documents

Safety Information

View on LIMS

FAQ

User Discussion Forum

Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).

Wafer clamps for 4 inch, 6 inch and 8 inch wafers are also available.