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• Parallel plate reactive ion etching system. 
• Plasma excitation: RF (13.56 MHz), Max power: 600W
• Process gases: CF₄, CHF₃, SF₆, O₂ and Ar. 
• Min Pressure: 10mTorr.
• 8" max wafer diameter.
• Intellevation LEP400 laser interferometric etch depth monitor and end point detector.

• Main Application: Etching Si, SiO₂, Si₃N₄, W, Mo and polymers (resists) with fluorine-based chemistry.

Responsible: Dmitry Suyatin

Location: Room Q158, EVA-Lab (Cleanroom Level 1)

License and Booking Required: Yes

Model:  Sirus T2 Table-top RIE

Supplier: Trion Technology.

User Manuals

Process

Staff Documents

Safety Information 

View on LIMS

FAQ

User Discussion Forum

Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).

No wafer clamping.

Room temperature processing only.