• Main application: Large area exposure of regular patterns
• Gratings, square or hexagonal dot arrays
• Monochromatic pulsed excimer laser (193nm wavelenth) 
• Resolution below 100nm, Maximum pitch approx. 1.5µm.
• 4" max wafer diameter
• Exposure insensitive to uneven surface.
• Scanning Electron microscopy imaging
• Schottky field emission
• Detectors: In-lens SE & EsB, E-T SE, aBSD, aSTEM, EDS and EBSD
• Plasma cleaner

Responsible: Sarah McKibbin Peter Blomqvist & Anders Kvennefors

Location: Room Q241Q260, New EBL-Lab (Level 2 - Berseilius Lab)

License and Booking Required: Yes

Safety Information 

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