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• Parallel plate RF processing. 
• Plasma excitation: RF (13.56 MHz), Max power: 600W
• Min Pressure: 10mTorr
• Process gases: CF₄, CHF₃, SF₆, O₂ and Ar. 
• 8" max wafer diameter.
• Equipped with Intellevation LEP400 laser interferometric etch depth monitor and end point detector.

• Main Application: Etching Si, SiO₂, Si₃N₄, W, Mo and polymers (resists) with fluorine-based chemistry.

  Info
  Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones). No wafer clamping. Room temperature processing only.

  
  

Reactive Ion Etching (RIE) system Sirus T2 Plus from Trion Technology

Responsible: Dmitry Suyatin

Location: Room Q158, EVA-Lab (Cleanroom Level 1)

License and Booking Required: Yes

User Manuals

Process

Staff Documents

Safety Information 

View on LIMS

FAQ