Metal organic vapor phase epitaxy (MOVPE) CCS is low pressure system dedicated for III-V material synthesis (mainly arsenide arsenides and antimonidesphosphides)

• Close coupled showerhead reactor design equipped with a sacrificial deposition quartz shield
• Inert atmospheric processes (N₂ or H₂)
• Maximum reactor temperature below 800° up to 1000° (susceptor surface temperature)
• adjustable gap between 5 and 25 mm
• ARGUS in-situ surface temperature monitoring
• Low pressure MOVPE (commonly between 50 and 800 mbar)
• Metal organic source materials: TMGa, TEGa, TMIn, TMAl, TTBAl, TMSb, TESb, TMBi, DEZn, TESn, DTBSe
• In-situ HCl etching capability
• Available susceptor sizes: 1x 3”, 1x4”, 3x2”
• N₂ inert gas atmosphere glove box attached
• EPSION concentration control of almost all metal organic sources
• LayTec system for in-situ reflectometry available
• Main application: Synthesis of III-V-based one-dimensional nanostructures as e.g. InP. GaAs, InAs, InSb, (Al,Ga)As, In(As,Sb)

Responsible: Sebastian  Lehmann & Sungyoun JuJohan Stjernholm

Location: Room Q252, Level 2 

License and Booking Required: Yes

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